Pixel array structure and production method thereof as well as array substrate and display device

一种像素阵列结构及其制作方法、阵列基板和显示装置

Abstract

The invention discloses a pixel array structure and a production method thereof as well as an array substrate and a display device. The production method of the pixel array structure comprises the following steps of forming a doping active layer above an active layer, and causing the doping active layer to cover the active layer incompletely; forming a source drain metal layer above the doping active layer and the active layer, and causing the source drain metal active layer to cover the doping active layer partially; etching the source drain metal layer to form a source electrode and a drain electrode; etching the doping active layer and the active layer along the edge of the source drain metal layer so as to form an optimal channel. According to the production method, through changing a channel production process in the prior art, the doping active layer, which is covered incompletely, is continuously formed on the active layer, and the doping active layer and the active layer are synchronously etched, and the doping active layer can be taken as a conductor and be equal to the side length of the drain electrode, so that the effect of reducing the length of the channel is formed, and thus the purpose of improving the On-state current is further achieved.
本发明公开了一种像素阵列结构及其制作方法、阵列基板和显示装置,所述像素阵列结构的制作方法包括:在有源层上方形成掺杂有源层,且上述掺杂有源层不完全覆盖所述有源层;在所述掺杂有源层和有源层上方形成源漏金属层,且所述源漏金属层部分覆盖所述掺杂有源层;对所述源漏金属层进行刻蚀,形成源极和漏极;沿着所述源漏金属层的边缘对所述掺杂有源层和所述有源层进行刻蚀,形成优化沟道。该制作方法通过改变现有技术的沟道制作工艺,在有源层上继续形成不完全覆盖的掺杂有源层,并对掺杂有源层和有源层同时进行刻蚀,由于掺杂有源层可以将其视为导体,可以等同于将漏极边长,从而形成沟道长度变短的效果,进一步达到提高开态电流的目的。

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    WO-2015090059-A1June 25, 2015京东方科技集团股份有限公司, 北京京东方光电科技有限公司Structure de réseau de pixel et son procédé de fabrication, substrat de réseau et dispositif d'affichage